HiSilicon Kirin 810 vs HiSilicon Kirin 960
The HiSilicon Kirin 810 and Kirin 960 are two processors manufactured by HiSilicon, both designed for use in smartphones and tablets. While they share some similarities, there are several key differences in their specifications.
Starting with the Kirin 810, it is built on a 7 nm lithography process, making it more power-efficient than its counterpart. Its CPU architecture consists of two Cortex-A76 cores clocked at 2.27 GHz and six Cortex-A55 cores clocked at 1.88 GHz. This gives it a total of eight cores. The instruction set used is ARMv8.2-A, which provides improved performance and security. With 6900 million transistors, the Kirin 810 has a higher transistor count, indicating a more powerful processing capability.
In terms of neural processing, the Kirin 810 incorporates the Ascend D100 Lite and HUAWEI Da Vinci Architecture, which enables advanced AI capabilities such as machine learning and neural networks. This makes it suitable for running AI-based applications and tasks efficiently.
Moving on to the Kirin 960, it is manufactured using a 16 nm lithography process, making it slightly less power-efficient compared to the Kirin 810. It also consists of eight cores, but with a different CPU architecture. It includes four Cortex-A73 cores clocked at 2.4 GHz and four Cortex-A53 cores clocked at 1.8 GHz. The instruction set used is ARMv8-A, which is slightly older compared to the ARMv8.2-A used in the Kirin 810.
In terms of transistor count, the Kirin 960 has 4000 million transistors, indicating a lower processing capability compared to the Kirin 810. However, both processors have the same TDP of 5 Watts, ensuring efficient power usage and heat dissipation.
In conclusion, the HiSilicon Kirin 810 and Kirin 960 processors differ in lithography, CPU architecture, and transistor count. The Kirin 810 boasts a more power-efficient 7 nm lithography process, advanced Cortex-A76 and Cortex-A55 CPU cores, and a higher transistor count. On the other hand, the Kirin 960 uses a slightly older 16 nm process and Cortex-A73 and Cortex-A53 CPU cores. Both processors have a TDP of 5 Watts, making them suitable for mobile devices.
Starting with the Kirin 810, it is built on a 7 nm lithography process, making it more power-efficient than its counterpart. Its CPU architecture consists of two Cortex-A76 cores clocked at 2.27 GHz and six Cortex-A55 cores clocked at 1.88 GHz. This gives it a total of eight cores. The instruction set used is ARMv8.2-A, which provides improved performance and security. With 6900 million transistors, the Kirin 810 has a higher transistor count, indicating a more powerful processing capability.
In terms of neural processing, the Kirin 810 incorporates the Ascend D100 Lite and HUAWEI Da Vinci Architecture, which enables advanced AI capabilities such as machine learning and neural networks. This makes it suitable for running AI-based applications and tasks efficiently.
Moving on to the Kirin 960, it is manufactured using a 16 nm lithography process, making it slightly less power-efficient compared to the Kirin 810. It also consists of eight cores, but with a different CPU architecture. It includes four Cortex-A73 cores clocked at 2.4 GHz and four Cortex-A53 cores clocked at 1.8 GHz. The instruction set used is ARMv8-A, which is slightly older compared to the ARMv8.2-A used in the Kirin 810.
In terms of transistor count, the Kirin 960 has 4000 million transistors, indicating a lower processing capability compared to the Kirin 810. However, both processors have the same TDP of 5 Watts, ensuring efficient power usage and heat dissipation.
In conclusion, the HiSilicon Kirin 810 and Kirin 960 processors differ in lithography, CPU architecture, and transistor count. The Kirin 810 boasts a more power-efficient 7 nm lithography process, advanced Cortex-A76 and Cortex-A55 CPU cores, and a higher transistor count. On the other hand, the Kirin 960 uses a slightly older 16 nm process and Cortex-A73 and Cortex-A53 CPU cores. Both processors have a TDP of 5 Watts, making them suitable for mobile devices.
CPU cores and architecture
Architecture | 2x 2.27 GHz – Cortex-A76 6x 1.88 GHz – Cortex-A55 |
4x 2.4 GHz – Cortex-A73 4x 1.8 GHz – Cortex-A53 |
Number of cores | 8 | 8 |
Instruction Set | ARMv8.2-A | ARMv8-A |
Lithography | 7 nm | 16 nm |
Number of transistors | 6900 million | 4000 million |
TDP | 5 Watt | 5 Watt |
Neural Processing | Ascend D100 Lite, HUAWEI Da Vinci Architecture |
Memory (RAM)
Max amount | up to 8 GB | up to 6 GB |
Memory type | LPDDR4X | LPDDR4 |
Memory frequency | 2133 MHz | 1866 MHz |
Memory-bus | 4x16 bit | 2x32 bit |
Storage
Storage specification | UFS 2.1 | UFS 2.1 |
Graphics
GPU name | Mali-G52 MP6 | Mali-G71 MP8 |
GPU Architecture | Bifrost | Bifrost |
GPU frequency | 820 MHz | 900 MHz |
Execution units | 6 | 8 |
Shaders | 96 | 128 |
DirectX | 12 | 11.3 |
OpenCL API | 2.0 | 1.2 |
OpenGL API | ES 3.2 | |
Vulkan API | 1.0 | 1.0 |
Camera, Video, Display
Max camera resolution | 1x 48MP, 2x 20MP | 1x 20MP, 2x 12MP |
Max Video Capture | FullHD@30fps | 4K@30fps |
Video codec support | H.264 (AVC) H.265 (HEVC) VP8 VP9 |
H.264 (AVC) H.265 (HEVC) VP8 VP9 |
Wireless
4G network | Yes | Yes |
5G network | Yes | Yes |
Peak Download Speed | 0.6 Gbps | 0.6 Gbps |
Peak Upload Speed | 0.15 Gbps | 0.15 Gbps |
Wi-Fi | 6 (802.11ax) | 5 (802.11ac) |
Bluetooth | 5.1 | 4.2 |
Satellite navigation | BeiDou GPS GLONASS |
BeiDou GPS Galileo GLONASS |
Supplemental Information
Launch Date | 2019 Quarter 2 | 2016 October |
Partnumber | Hi6280 | Hi3660 |
Vertical Segment | Mobiles | Mobiles |
Positioning | Mid-end | Flagship |
AnTuTu 10
Total Score
GeekBench 6 Single-Core
Score
GeekBench 6 Multi-Core
Score
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