HiSilicon Kirin 810 vs HiSilicon Kirin 930
The HiSilicon Kirin 810 and the HiSilicon Kirin 930 are two processors with distinctive specifications. Let's compare them to further analyze their differences.
Starting with the HiSilicon Kirin 810, it boasts an architecture comprising of 2x 2.27 GHz Cortex-A76 cores and 6x 1.88 GHz Cortex-A55 cores. This octa-core processor operates on the ARMv8.2-A instruction set. With a lithography of 7 nm, it showcases remarkable efficiency. It houses a whopping 6900 million transistors, resulting in enhanced performance. The thermal design power (TDP) is measured at 5 Watts. Furthermore, the HiSilicon Kirin 810 features Neural Processing capabilities with Ascend D100 Lite and HUAWEI Da Vinci Architecture.
In contrast, the HiSilicon Kirin 930 has an architecture that combines 4x 2 GHz Cortex-A53 cores with 4x 1.5 GHz Cortex-A53 cores. Like its counterpart, it has eight cores in total. It operates on the ARMv8-A instruction set and has a lithography of 28 nm. With 1000 million transistors, it falls slightly behind the Kirin 810 in terms of transistor count. Additionally, its TDP matches that of the Kirin 810, standing at 5 Watts.
When comparing these two processors, it becomes evident that the Kirin 810 outshines the Kirin 930 in several aspects. The Kirin 810's 7 nm lithography offers improved power efficiency compared to the Kirin 930's 28 nm. Furthermore, with 6900 million transistors, the Kirin 810 surpasses the Kirin 930's 1000 million, resulting in potentially superior performance.
Moreover, the CPU architecture of the Kirin 810 features Cortex-A76 and Cortex-A55 cores, which are known for their robust and efficient performance. On the other hand, the Kirin 930's architecture comprises exclusively of Cortex-A53 cores, which are generally considered to be less powerful and efficient.
In conclusion, the HiSilicon Kirin 810 demonstrates superiority in terms of transistor count, lithography, and CPU architecture compared to the HiSilicon Kirin 930. With its advanced specifications, the Kirin 810 is likely to offer improved performance and efficiency in various applications.
Starting with the HiSilicon Kirin 810, it boasts an architecture comprising of 2x 2.27 GHz Cortex-A76 cores and 6x 1.88 GHz Cortex-A55 cores. This octa-core processor operates on the ARMv8.2-A instruction set. With a lithography of 7 nm, it showcases remarkable efficiency. It houses a whopping 6900 million transistors, resulting in enhanced performance. The thermal design power (TDP) is measured at 5 Watts. Furthermore, the HiSilicon Kirin 810 features Neural Processing capabilities with Ascend D100 Lite and HUAWEI Da Vinci Architecture.
In contrast, the HiSilicon Kirin 930 has an architecture that combines 4x 2 GHz Cortex-A53 cores with 4x 1.5 GHz Cortex-A53 cores. Like its counterpart, it has eight cores in total. It operates on the ARMv8-A instruction set and has a lithography of 28 nm. With 1000 million transistors, it falls slightly behind the Kirin 810 in terms of transistor count. Additionally, its TDP matches that of the Kirin 810, standing at 5 Watts.
When comparing these two processors, it becomes evident that the Kirin 810 outshines the Kirin 930 in several aspects. The Kirin 810's 7 nm lithography offers improved power efficiency compared to the Kirin 930's 28 nm. Furthermore, with 6900 million transistors, the Kirin 810 surpasses the Kirin 930's 1000 million, resulting in potentially superior performance.
Moreover, the CPU architecture of the Kirin 810 features Cortex-A76 and Cortex-A55 cores, which are known for their robust and efficient performance. On the other hand, the Kirin 930's architecture comprises exclusively of Cortex-A53 cores, which are generally considered to be less powerful and efficient.
In conclusion, the HiSilicon Kirin 810 demonstrates superiority in terms of transistor count, lithography, and CPU architecture compared to the HiSilicon Kirin 930. With its advanced specifications, the Kirin 810 is likely to offer improved performance and efficiency in various applications.
CPU cores and architecture
Architecture | 2x 2.27 GHz – Cortex-A76 6x 1.88 GHz – Cortex-A55 |
4x 2 GHz – Cortex-A53 4x 1.5 GHz – Cortex-A53 |
Number of cores | 8 | 8 |
Instruction Set | ARMv8.2-A | ARMv8-A |
Lithography | 7 nm | 28 nm |
Number of transistors | 6900 million | 1000 million |
TDP | 5 Watt | 5 Watt |
Neural Processing | Ascend D100 Lite, HUAWEI Da Vinci Architecture |
Memory (RAM)
Max amount | up to 8 GB | up to 6 GB |
Memory type | LPDDR4X | LPDDR3 |
Memory frequency | 2133 MHz | 800 MHz |
Memory-bus | 4x16 bit | 2x32 bit |
Storage
Storage specification | UFS 2.1 | UFS 2.0 |
Graphics
GPU name | Mali-G52 MP6 | Mali-T628 MP4 |
GPU Architecture | Bifrost | Midgard |
GPU frequency | 820 MHz | 600 MHz |
Execution units | 6 | 4 |
Shaders | 96 | 64 |
DirectX | 12 | 11 |
OpenCL API | 2.0 | 1.2 |
OpenGL API | ES 3.2 | |
Vulkan API | 1.0 | 1.0 |
Camera, Video, Display
Max screen resolution | 2560x1600 | |
Max camera resolution | 1x 48MP, 2x 20MP | 1x 20MP |
Max Video Capture | FullHD@30fps | 4K@30fps |
Video codec support | H.264 (AVC) H.265 (HEVC) VP8 VP9 |
H.264 (AVC) H.265 (HEVC) VP8 |
Wireless
4G network | Yes | Yes |
5G network | Yes | Yes |
Peak Download Speed | 0.6 Gbps | 0.3 Gbps |
Peak Upload Speed | 0.15 Gbps | 0.05 Gbps |
Wi-Fi | 6 (802.11ax) | 5 (802.11ac) |
Bluetooth | 5.1 | 4.2 |
Satellite navigation | BeiDou GPS GLONASS |
BeiDou GPS Galileo GLONASS |
Supplemental Information
Launch Date | 2019 Quarter 2 | 2015 Quarter 2 |
Partnumber | Hi6280 | Hi3630 |
Vertical Segment | Mobiles | Mobiles |
Positioning | Mid-end | Mid-end |
AnTuTu 10
Total Score
GeekBench 6 Single-Core
Score
GeekBench 6 Multi-Core
Score
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