HiSilicon Kirin 710 vs HiSilicon Kirin 935

The HiSilicon Kirin 710 and the HiSilicon Kirin 935 are two processors designed by HiSilicon, a subsidiary of Huawei Technologies. While they both belong to the Kirin series, they differ in terms of specifications and performance.

Starting with the HiSilicon Kirin 710, it features an architecture with 4x 2.2 GHz Cortex-A73 cores and 4x 1.7 GHz Cortex-A53 cores. With a total of 8 cores, it offers a balanced combination of power and efficiency. The processor is built on a 12 nm lithography, allowing for improved power efficiency and performance. It packs 5,500 million transistors, which indicates a high level of integration on the chip. The TDP (Thermal Design Power) of the Kirin 710 is 5 Watts, which suggests that it consumes less power and produces less heat.

On the other hand, the HiSilicon Kirin 935 features an architecture with 4x 2.2 GHz Cortex-A53 cores and 4x 1.5 GHz Cortex-A53 cores. Like the Kirin 710, it offers 8 cores for multitasking capabilities. However, the Kirin 935 is built on a 28 nm lithography, which is less advanced compared to the Kirin 710. This translates to slightly reduced power efficiency and performance. It has 1,000 million transistors, indicating lower integration compared to the Kirin 710. The TDP of the Kirin 935 is 7 Watts, implying it consumes slightly more power and generates more heat compared to the Kirin 710.

In summary, the HiSilicon Kirin 710 and the HiSilicon Kirin 935 differ in terms of lithography, number of transistors, and TDP. The Kirin 710 offers a more advanced 12 nm lithography, higher transistor count, and lower power consumption compared to the Kirin 935 with its 28 nm lithography, lower transistor count, and slightly higher power consumption. These differences indicate that the Kirin 710 may provide better performance and energy efficiency compared to the Kirin 935 in real-world applications.