HiSilicon Kirin 810 vs Unisoc SC9832E
The HiSilicon Kirin 810 and Unisoc SC9832E are two processors with different specifications.
Starting with the HiSilicon Kirin 810, it features an architecture of 2x 2.27 GHz Cortex-A76 cores and 6x 1.88 GHz Cortex-A55 cores. This processor has a total of 8 cores and utilizes the ARMv8.2-A instruction set. It is manufactured using a 7 nm lithography process and consists of 6900 million transistors. The thermal design power (TDP) of the Kirin 810 is 5 Watts. Additionally, it incorporates a neural processing unit known as the Ascend D100 Lite, which is based on the HUAWEI Da Vinci Architecture.
On the other hand, the Unisoc SC9832E has an architecture consisting of 4x 1.4 GHz Cortex-A53 cores. It has a total of 4 cores and supports the ARMv8-A instruction set. The SC9832E is manufactured using a 28 nm lithography process and has a TDP of 7 Watts.
Comparing the two processors, the Kirin 810 has a higher number of CPU cores (8 cores compared to 4 cores in the SC9832E), which can potentially result in better multitasking capabilities and overall performance. Moreover, the Kirin 810 utilizes a more advanced 7 nm lithography process, which generally leads to improved power efficiency and higher clock speeds. In contrast, the SC9832E is manufactured using a less efficient 28 nm process.
The Kirin 810 also stands out with its neural processing unit, the Ascend D100 Lite, which is designed to enhance AI-related tasks. This can be advantageous for applications and tasks that require artificial intelligence and machine learning capabilities. However, it is important to note that the SC9832E does not have a dedicated neural processing unit.
In summary, the HiSilicon Kirin 810 offers a higher number of CPU cores, an advanced 7 nm lithography process, and a dedicated neural processing unit. These specifications suggest that the Kirin 810 may deliver better performance and power efficiency compared to the Unisoc SC9832E, making it more suitable for demanding tasks and AI-related applications.
Starting with the HiSilicon Kirin 810, it features an architecture of 2x 2.27 GHz Cortex-A76 cores and 6x 1.88 GHz Cortex-A55 cores. This processor has a total of 8 cores and utilizes the ARMv8.2-A instruction set. It is manufactured using a 7 nm lithography process and consists of 6900 million transistors. The thermal design power (TDP) of the Kirin 810 is 5 Watts. Additionally, it incorporates a neural processing unit known as the Ascend D100 Lite, which is based on the HUAWEI Da Vinci Architecture.
On the other hand, the Unisoc SC9832E has an architecture consisting of 4x 1.4 GHz Cortex-A53 cores. It has a total of 4 cores and supports the ARMv8-A instruction set. The SC9832E is manufactured using a 28 nm lithography process and has a TDP of 7 Watts.
Comparing the two processors, the Kirin 810 has a higher number of CPU cores (8 cores compared to 4 cores in the SC9832E), which can potentially result in better multitasking capabilities and overall performance. Moreover, the Kirin 810 utilizes a more advanced 7 nm lithography process, which generally leads to improved power efficiency and higher clock speeds. In contrast, the SC9832E is manufactured using a less efficient 28 nm process.
The Kirin 810 also stands out with its neural processing unit, the Ascend D100 Lite, which is designed to enhance AI-related tasks. This can be advantageous for applications and tasks that require artificial intelligence and machine learning capabilities. However, it is important to note that the SC9832E does not have a dedicated neural processing unit.
In summary, the HiSilicon Kirin 810 offers a higher number of CPU cores, an advanced 7 nm lithography process, and a dedicated neural processing unit. These specifications suggest that the Kirin 810 may deliver better performance and power efficiency compared to the Unisoc SC9832E, making it more suitable for demanding tasks and AI-related applications.
AnTuTu 10
Total Score
GeekBench 6 Single-Core
Score
GeekBench 6 Multi-Core
Score
CPU cores and architecture
| Architecture | 2x 2.27 GHz – Cortex-A76 6x 1.88 GHz – Cortex-A55 |
4x 1.4 GHz – Cortex-A53 |
| Number of cores | 8 | 4 |
| Instruction Set | ARMv8.2-A | ARMv8-A |
| Lithography | 7 nm | 28 nm |
| Number of transistors | 6900 million | |
| TDP | 5 Watt | 7 Watt |
| Neural Processing | Ascend D100 Lite, HUAWEI Da Vinci Architecture |
Memory (RAM)
| Max amount | up to 8 GB | up to 2 GB |
| Memory type | LPDDR4X | LPDDR3 |
| Memory frequency | 2133 MHz | 667 MHz |
| Memory-bus | 4x16 bit |
Storage
| Storage specification | UFS 2.1 | eMMC 5.1 |
Graphics
| GPU name | Mali-G52 MP6 | Mali-T820 MP1 |
| GPU Architecture | Mali Bifrost | Mali Midgard |
| GPU frequency | 820 MHz | 680 MHz |
| Execution units | 6 | 1 |
| Shaders | 96 | 4 |
| DirectX | 12 | 11 |
| OpenCL API | 2.0 | 1.2 |
| OpenGL API | ES 3.2 | ES 3.2 |
| Vulkan API | 1.0 | 1.0 |
Camera, Video, Display
| Max screen resolution | 1440x720 | |
| Max camera resolution | 1x 48MP, 2x 20MP | 1x 13MP |
| Max Video Capture | FullHD@30fps | FullHD@30fps |
| Video codec support | H.264 (AVC) H.265 (HEVC) VP8 VP9 |
H.264 (AVC) |
Wireless
| 4G network | Yes | Yes |
| 5G network | Yes | Yes |
| Peak Download Speed | 0.6 Gbps | 0.15 Gbps |
| Peak Upload Speed | 0.15 Gbps | 0.05 Gbps |
| Wi-Fi | 6 (802.11ax) | 4 (802.11n) |
| Bluetooth | 5.1 | 4.2 |
| Satellite navigation | BeiDou GPS GLONASS |
BeiDou GPS GLONASS |
Supplemental Information
| Launch Date | 2019 Quarter 2 | 2018 |
| Partnumber | Hi6280 | |
| Vertical Segment | Mobiles | Mobiles |
| Positioning | Mid-end | Low-end |
Popular comparisons:
1
HiSilicon Kirin 9000S vs MediaTek Dimensity 810
2
Qualcomm Snapdragon 860 vs Apple M2 (iPad)
3
HiSilicon Kirin 8000 vs MediaTek Dimensity 1000L
4
Qualcomm Snapdragon 8 Gen 5 vs MediaTek Helio G70
5
Apple A16 Bionic vs MediaTek Dimensity 8400
6
Qualcomm Snapdragon 7 Plus Gen 3 vs Google Tensor G5
7
Unisoc Tanggula T770 5G vs Qualcomm Snapdragon 720G
8
Qualcomm Snapdragon 821 vs Apple A17 Pro
9
Qualcomm Snapdragon 768G vs Samsung Exynos 9820
10
Samsung Exynos 2400 vs Qualcomm Snapdragon 680