HiSilicon Kirin 980 vs HiSilicon Kirin 9000E 5G

The HiSilicon Kirin 980 and the HiSilicon Kirin 9000E 5G are two processors that have distinct specifications.

Starting with the HiSilicon Kirin 980, it utilizes a 7 nm lithography and consists of a total of eight cores. The architecture consists of 2x 2.6 GHz Cortex-A76 cores, 2x 1.92 GHz Cortex-A76 cores, and 4x 1.8 GHz Cortex-A55 cores. With an instruction set of ARMv8-A, this processor boasts a neural processing unit called HiSilicon Dual NPU. It has a TDP (thermal design power) of 6 Watts and contains approximately 6900 million transistors.

On the other hand, the HiSilicon Kirin 9000E 5G features a 5 nm lithography, which allows for more efficient power consumption. Like the Kirin 980, it also has eight cores, consisting of 1x 3.13 GHz Cortex-A77 core, 3x 2.54 GHz Cortex-A77 cores, and 4x 2.05 GHz Cortex-A55 cores. Its instruction set is ARMv8.2-A, which signifies a slight improvement in terms of architecture. This processor incorporates an impressive neural processing unit called Ascend Lite + Ascend Tiny, along with HUAWEI Da Vinci Architecture 2.0. It shares the same TDP of 6 Watts as the Kirin 980 but has a significantly higher number of transistors, with approximately 15300 million.

In summary, the HiSilicon Kirin 9000E 5G appears to have a more advanced lithography at 5 nm, which may result in greater energy efficiency compared to the Kirin 980's 7 nm. Additionally, the Kirin 9000E 5G features faster clock speeds for its Cortex-A77 cores, which may lead to improved performance in certain tasks. The introduction of the Ascend Lite + Ascend Tiny neural processing unit and the HUAWEI Da Vinci Architecture 2.0 further enhance the capabilities of the Kirin 9000E 5G. However, despite these improvements, both processors have a similar TDP and the Kirin 980 still maintains a respectable number of transistors. Ultimately, the choice between these processors would depend on the specific requirements and priorities of the user.