HiSilicon Kirin 710F vs Unisoc SC7731E
The HiSilicon Kirin 710F and Unisoc SC7731E are two processors that cater to different needs. Let's compare them based on their specifications.
Starting with the HiSilicon Kirin 710F, it is built on a 12nm lithography process, making it more power-efficient and capable of delivering better performance. It features an architecture of 4x 2.2 GHz Cortex-A73 cores and 4x 1.7 GHz Cortex-A53 cores. With a total of 8 cores, this processor provides the user with sufficient power for multitasking and running demanding applications. The ARMv8-A instruction set ensures compatibility with the latest software. Additionally, it houses 5500 million transistors, indicating a higher level of integration and potential for faster task execution. The TDP (Thermal Design Power) of the Kirin 710F is 5 watts, indicating moderate power consumption.
On the other hand, the Unisoc SC7731E is built on a larger 28nm lithography process, making it less energy-efficient compared to the Kirin 710F. It features an architecture of 4x 1.3 GHz Cortex-A7 cores. With only 4 cores, this processor may struggle to deliver smooth performance while executing demanding tasks. The ARMv7-A instruction set limits compatibility with some modern software. The TDP of the SC7731E is slightly higher at 7 watts, indicating relatively higher power consumption.
In summary, the HiSilicon Kirin 710F outperforms the Unisoc SC7731E in terms of both architecture and lithography. The Kirin 710F's 8-core configuration and its usage of the ARMv8-A instruction set make it a more capable and efficient processor. Moreover, the smaller lithography process allows the Kirin 710F to deliver better performance while consuming less power. On the other hand, the Unisoc SC7731E's lower core count, larger lithography, and older instruction set make it suitable for basic smartphone applications but may struggle with demanding tasks.
Starting with the HiSilicon Kirin 710F, it is built on a 12nm lithography process, making it more power-efficient and capable of delivering better performance. It features an architecture of 4x 2.2 GHz Cortex-A73 cores and 4x 1.7 GHz Cortex-A53 cores. With a total of 8 cores, this processor provides the user with sufficient power for multitasking and running demanding applications. The ARMv8-A instruction set ensures compatibility with the latest software. Additionally, it houses 5500 million transistors, indicating a higher level of integration and potential for faster task execution. The TDP (Thermal Design Power) of the Kirin 710F is 5 watts, indicating moderate power consumption.
On the other hand, the Unisoc SC7731E is built on a larger 28nm lithography process, making it less energy-efficient compared to the Kirin 710F. It features an architecture of 4x 1.3 GHz Cortex-A7 cores. With only 4 cores, this processor may struggle to deliver smooth performance while executing demanding tasks. The ARMv7-A instruction set limits compatibility with some modern software. The TDP of the SC7731E is slightly higher at 7 watts, indicating relatively higher power consumption.
In summary, the HiSilicon Kirin 710F outperforms the Unisoc SC7731E in terms of both architecture and lithography. The Kirin 710F's 8-core configuration and its usage of the ARMv8-A instruction set make it a more capable and efficient processor. Moreover, the smaller lithography process allows the Kirin 710F to deliver better performance while consuming less power. On the other hand, the Unisoc SC7731E's lower core count, larger lithography, and older instruction set make it suitable for basic smartphone applications but may struggle with demanding tasks.
AnTuTu 10
Total Score
GeekBench 6 Single-Core
Score
GeekBench 6 Multi-Core
Score
CPU cores and architecture
| Architecture | 4x 2.2 GHz – Cortex-A73 4x 1.7 GHz – Cortex-A53 |
4x 1.3 GHz – Cortex-A7 |
| Number of cores | 8 | 4 |
| Instruction Set | ARMv8-A | ARMv7-A |
| Lithography | 12 nm | 28 nm |
| Number of transistors | 5500 million | |
| TDP | 5 Watt | 7 Watt |
Memory (RAM)
| Max amount | up to 6 GB | up to 1 GB |
| Memory type | LPDDR4 | LPDDR3 |
| Memory frequency | 1866 MHz | 533 MHz |
| Memory-bus | 2x32 bit |
Storage
| Storage specification | UFS 2.1 | eMMC 5.1 |
Graphics
| GPU name | Mali-G51 MP4 | Mali-T820 MP1 |
| GPU Architecture | Mali Bifrost | Mali Midgard |
| GPU frequency | 1000 MHz | 600 MHz |
| Execution units | 4 | 1 |
| Shaders | 64 | 4 |
| DirectX | 12 | 11 |
| OpenCL API | 2.0 | 1.2 |
| OpenGL API | ES 3.2 | |
| Vulkan API | 1.0 | 1.0 |
Camera, Video, Display
| Max screen resolution | 2340x1080 | 1440x720 |
| Max camera resolution | 1x 48MP, 2x 24MP | 1x 8MP |
| Max Video Capture | HD@30fps | |
| Video codec support | H.264 (AVC) H.265 (HEVC) VP8 VP9 |
H.264 (AVC) |
Wireless
| 4G network | Yes | Yes |
| 5G network | Yes | Yes |
| Peak Download Speed | 0.6 Gbps | |
| Peak Upload Speed | 0.15 Gbps | |
| Wi-Fi | 4 (802.11n) | 4 (802.11n) |
| Bluetooth | 4.2 | 4.2 |
| Satellite navigation | BeiDou GPS GLONASS |
BeiDou GPS GLONASS |
Supplemental Information
| Launch Date | 2019 Quarter 1 | 2018 Quarter 2 |
| Partnumber | Hi6260 | |
| Vertical Segment | Mobiles | Mobiles |
| Positioning | Mid-end | Low-end |
Popular comparisons:
1
Samsung Exynos 7870 vs MediaTek Dimensity 7100
2
Samsung Exynos 8895 vs Unisoc T9100
3
Qualcomm Snapdragon 680 vs Apple A15 Bionic
4
MediaTek Helio G96 vs Samsung Exynos 2500
5
Unisoc SC7731E vs Apple A10 Fusion
6
MediaTek Dimensity 810 vs Qualcomm Snapdragon 690
7
MediaTek Dimensity 6100 Plus vs MediaTek Dimensity 900
8
MediaTek Dimensity 7360 vs Qualcomm Snapdragon 678
9
MediaTek Dimensity 6080 vs MediaTek Helio G90T
10
Qualcomm Snapdragon 855 vs MediaTek Dimensity 8350