HiSilicon Kirin 710F vs HiSilicon Kirin 9000E 5G
The HiSilicon Kirin 710F and HiSilicon Kirin 9000E 5G are two processors with different specifications.
Starting with the HiSilicon Kirin 710F, it features a CPU architecture of 4x 2.2 GHz Cortex-A73 and 4x 1.7 GHz Cortex-A53. With a total of 8 cores, it operates on the ARMv8-A instruction set. Manufactured on a 12 nm lithography, it contains approximately 5500 million transistors. The thermal design power (TDP) is at 5 Watts.
On the other hand, the HiSilicon Kirin 9000E 5G boasts a more advanced architecture. It includes 1x 3.13 GHz Cortex-A77, 3x 2.54 GHz Cortex-A77, and 4x 2.05 GHz Cortex-A55 cores. Similarly, it has 8 cores and operates on the ARMv8.2-A instruction set. The processor is manufactured on a 5 nm lithography, which is a significant improvement over the Kirin 710F. It contains approximately 15300 million transistors, indicating a higher level of complexity. The TDP for this processor is slightly higher at 6 Watts. Additionally, it includes neural processing capabilities through the Ascend Lite + Ascend Tiny and HUAWEI Da Vinci Architecture 2.0.
Comparing the two processors, it is evident that the HiSilicon Kirin 9000E 5G offers superior specifications. With faster CPU cores and a more advanced architecture, it provides enhanced performance and efficiency. The smaller 5 nm lithography allows for a higher density of transistors, resulting in improved processing capabilities. The neural processing capabilities of the Kirin 9000E 5G also indicate its suitability for AI and machine learning tasks.
While the HiSilicon Kirin 710F may still be a capable processor, the Kirin 9000E 5G offers substantial upgrades in terms of speed, power, and additional features. It is important to consider these specifications when choosing a processor, as they significantly influence the performance and capabilities of a device.
Starting with the HiSilicon Kirin 710F, it features a CPU architecture of 4x 2.2 GHz Cortex-A73 and 4x 1.7 GHz Cortex-A53. With a total of 8 cores, it operates on the ARMv8-A instruction set. Manufactured on a 12 nm lithography, it contains approximately 5500 million transistors. The thermal design power (TDP) is at 5 Watts.
On the other hand, the HiSilicon Kirin 9000E 5G boasts a more advanced architecture. It includes 1x 3.13 GHz Cortex-A77, 3x 2.54 GHz Cortex-A77, and 4x 2.05 GHz Cortex-A55 cores. Similarly, it has 8 cores and operates on the ARMv8.2-A instruction set. The processor is manufactured on a 5 nm lithography, which is a significant improvement over the Kirin 710F. It contains approximately 15300 million transistors, indicating a higher level of complexity. The TDP for this processor is slightly higher at 6 Watts. Additionally, it includes neural processing capabilities through the Ascend Lite + Ascend Tiny and HUAWEI Da Vinci Architecture 2.0.
Comparing the two processors, it is evident that the HiSilicon Kirin 9000E 5G offers superior specifications. With faster CPU cores and a more advanced architecture, it provides enhanced performance and efficiency. The smaller 5 nm lithography allows for a higher density of transistors, resulting in improved processing capabilities. The neural processing capabilities of the Kirin 9000E 5G also indicate its suitability for AI and machine learning tasks.
While the HiSilicon Kirin 710F may still be a capable processor, the Kirin 9000E 5G offers substantial upgrades in terms of speed, power, and additional features. It is important to consider these specifications when choosing a processor, as they significantly influence the performance and capabilities of a device.
AnTuTu 10
Total Score
GeekBench 6 Single-Core
Score
GeekBench 6 Multi-Core
Score
CPU cores and architecture
Architecture | 4x 2.2 GHz – Cortex-A73 4x 1.7 GHz – Cortex-A53 |
1x 3.13 GHz – Cortex-A77 3x 2.54 GHz – Cortex-A77 4x 2.05 GHz – Cortex-A55 |
Number of cores | 8 | 8 |
Instruction Set | ARMv8-A | ARMv8.2-A |
Lithography | 12 nm | 5 nm |
Number of transistors | 5500 million | 15300 million |
TDP | 5 Watt | 6 Watt |
Neural Processing | Ascend Lite + Ascend Tiny, HUAWEI Da Vinci Architecture 2.0 |
Memory (RAM)
Max amount | up to 6 GB | up to 16 GB |
Memory type | LPDDR4 | LPDDR5 |
Memory frequency | 1866 MHz | 2750 MHz |
Memory-bus | 2x32 bit | 4x16 bit |
Storage
Storage specification | UFS 2.1 | UFS 3.1 |
Graphics
GPU name | Mali-G51 MP4 | Mali-G78 MP22 |
GPU Architecture | Mali Bifrost | Mali Valhall |
GPU frequency | 1000 MHz | 760 MHz |
Execution units | 4 | 22 |
Shaders | 64 | 352 |
DirectX | 12 | 12 |
OpenCL API | 2.0 | 2.1 |
OpenGL API | ES 3.2 | |
Vulkan API | 1.0 | 1.2 |
Camera, Video, Display
Max screen resolution | 2340x1080 | 3840x2160 |
Max camera resolution | 1x 48MP, 2x 24MP | |
Max Video Capture | 4K@60fps | |
Video codec support | H.264 (AVC) H.265 (HEVC) VP8 VP9 |
H.264 (AVC) H.265 (HEVC) VP8 VP9 |
Wireless
4G network | Yes | Yes |
5G network | Yes | Yes |
Peak Download Speed | 0.6 Gbps | 4.6 Gbps |
Peak Upload Speed | 0.15 Gbps | 2.5 Gbps |
Wi-Fi | 4 (802.11n) | 6 (802.11ax) |
Bluetooth | 4.2 | 5.2 |
Satellite navigation | BeiDou GPS GLONASS |
BeiDou GPS Galileo GLONASS NavIC |
Supplemental Information
Launch Date | 2019 Quarter 1 | 2020 October |
Partnumber | Hi6260 | |
Vertical Segment | Mobiles | Mobiles |
Positioning | Mid-end | Flagship |
Popular comparisons:
1
Qualcomm Snapdragon 765G vs Qualcomm Snapdragon 821
2
Qualcomm Snapdragon 630 vs Qualcomm Snapdragon 7 Plus Gen 2
3
Apple A10 Fusion vs Apple A17 Pro
4
HiSilicon Kirin 9000S vs MediaTek Dimensity 7400
5
Qualcomm Snapdragon 439 vs Qualcomm Snapdragon 660
6
Samsung Exynos 9610 vs MediaTek Helio G90
7
MediaTek Dimensity 9400e vs Unisoc Tiger T310
8
HiSilicon Kirin 9010 vs Samsung Exynos 1580
9
Qualcomm Snapdragon 6 Gen 4 vs Apple A12 Bionic
10
MediaTek Helio P65 vs MediaTek Helio G91